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Company news about Flexible technology for large-size E-paper displays

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Flexible technology for large-size E-paper displays

2025-08-27

Abstract

To realize a flexible large-size e-paper, there are key technological issues of flexible process such as transferring method and thermal stability of the substrate and the device. Thus, new transferring method using a thick stainless steel substrates (STS430) prepared with multi-barrier layers has been developed along with back side etch technique in order to use current LCD infrastructure. Also, relatively high temperature process of 250 °C to achieve reliable amorphous silicon thin-film transistor backplanes has been developed. Then, we have successfully demonstrated A3-size flexible e-paper display with integrated gate driver-circuits using thin-film transistors on the flexible panel, and suggest the tiling method for implementing 40 inch and above size e-paper displays.
 

Introduction

Flexible displays have been attracted much attention as a next generation display for their ultra-slim, light–weight, durable, and conformable properties [1], [2]. In order to fabricate flexible displays, the flexible sheets such as plastics and metal foils instead of using glasses have been developed as a substrate material. Plastic substrates have merits of transparent, light, and even rollable properties, but there are low Tg and moisture permeation issue. Thus, the plastic substrate was pre-annealed to allow shrink before starting the conventional a-Si TFT (amorphous silicon thin-film transistor) process due to the thermal expansion and shrinkage of it during the TFT thermal process. On the other hand, the metal substrate has more advantages than other flexible substrates composed of organic materials in terms of process stability at a relatively high temperature, excellent dimensional stability, and good barrier characteristics against oxygen and moisture [3]. Thus, it can be used to make transistors without any pre-processing such as pre-annealing and encapsulation. Many interesting and technically progressive prototypes of flexible displays using the STS (stainless steel) foil have been reported [4], [5], [6], [7], which makes us to have expectations for the flexible display products in the near future. Also, we have developed various flexible AMEPD (active matrix electronic paper display) on this STS foil using electrophoretic ink films since 2005 [8], [9].
In order to use STS foils as a flexible substrate, ‘Bonding–Debonding’ process has to be developed to implement flexible displays using current LCD infrastructure, where the thin STS substrate was firstly bonded on a glass substrate with an adhesive material and then carried with the glass substrate. After completing all TFT processes, carrier glass was released by debonding process. Here, there is a limitation of process temperature due to the thermal property of organic adhesive layer between the carrier glass and the thin metal foil, so that we have to fabricate TFT at a lower temperature of less than 200 °C, resulting in poor stability of the switching device. Also, it has not been yet developed a large-area flexible display over A4-size (14-inch) due to the issues of flexible process such as a difficulty of transferring large flexible substrates in Gen. 2 (370 mm × 470 mm) line above, many process defects (peeling, particle. etc), and surface defects of the STS substrate itself. Moreover, it is not easy to apply integrated GIP (Gate driver In the Panel) technology to enhance the flexibility of the display due to the poor TFT performance on STS carried out below 200 °C.
Thus, robust backplane processes are essential in view of developing and manufacturing the flexible display. In this paper, we describe our so-called ‘Single Plate Process’ based on conventional a-Si TFT processes to resolve the issues of flexible process on the STS for making a large-size e-paper display and improve the performance of flexible TFTs on it suitable for applying GIP technology. Then, A3-size (˜19 inch) AMEPD prototype fabricated with current a-Si TFT infrastructure is demonstrated.
 

Section snippets

Fabrication of flexible backplane

A relatively thick STS 430 plate instead of a thin STS 304 foil was used as a substrate to adopt simple processes without using any carrier glasses and an additional adhesive layer. This thick STS enabled us to transfer it stably in a conventional Gen. 2 line as glass substrates because it has almost the same bending radius as the glass substrate. In addition, we can start to run the sample with just initial cleaning process and adopt high temperature process because of no adhesive layer,

Transistor performance

The transfer curves of the flexible TFT fabricated at 250 °C on STS are shown in Fig. 3(a) with varying Vds voltages. Initial property of the a-Si:H TFTs on STS is marked by gray curve, while the blue and the red curves represent electrical properties after heat treatment and bias-temperature stress (BTS), respectively. This flexible TFT shows equivalent results with the standard a-Si:H TFTs at 350 °C on glass as shown in Fig. 3(b). The electric characteristics of this a-Si TFT fabricated at

Conclusion

Preparing the metal foil substrate for manufacturing flexible AMEPD display is a demanding process, which involves coating of thick planarization layer to reduce the surface roughness and prevent chemical damage during the TFT process. Due to the process temperature limitation of using bonding-debonding method for substrate transport, the reliability of a-Si TFT fabricated below 200 °C exhibits rather poor device stability under bias-temperature stress. To increase the process temperature and

Acknowledgement

The authors would like to give thanks to all the members of R&D Team for fully supporting and cooperation in this work.
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Company news about-Flexible technology for large-size E-paper displays

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Flexible technology for large-size E-paper displays

2025-08-27

Abstract

To realize a flexible large-size e-paper, there are key technological issues of flexible process such as transferring method and thermal stability of the substrate and the device. Thus, new transferring method using a thick stainless steel substrates (STS430) prepared with multi-barrier layers has been developed along with back side etch technique in order to use current LCD infrastructure. Also, relatively high temperature process of 250 °C to achieve reliable amorphous silicon thin-film transistor backplanes has been developed. Then, we have successfully demonstrated A3-size flexible e-paper display with integrated gate driver-circuits using thin-film transistors on the flexible panel, and suggest the tiling method for implementing 40 inch and above size e-paper displays.
 

Introduction

Flexible displays have been attracted much attention as a next generation display for their ultra-slim, light–weight, durable, and conformable properties [1], [2]. In order to fabricate flexible displays, the flexible sheets such as plastics and metal foils instead of using glasses have been developed as a substrate material. Plastic substrates have merits of transparent, light, and even rollable properties, but there are low Tg and moisture permeation issue. Thus, the plastic substrate was pre-annealed to allow shrink before starting the conventional a-Si TFT (amorphous silicon thin-film transistor) process due to the thermal expansion and shrinkage of it during the TFT thermal process. On the other hand, the metal substrate has more advantages than other flexible substrates composed of organic materials in terms of process stability at a relatively high temperature, excellent dimensional stability, and good barrier characteristics against oxygen and moisture [3]. Thus, it can be used to make transistors without any pre-processing such as pre-annealing and encapsulation. Many interesting and technically progressive prototypes of flexible displays using the STS (stainless steel) foil have been reported [4], [5], [6], [7], which makes us to have expectations for the flexible display products in the near future. Also, we have developed various flexible AMEPD (active matrix electronic paper display) on this STS foil using electrophoretic ink films since 2005 [8], [9].
In order to use STS foils as a flexible substrate, ‘Bonding–Debonding’ process has to be developed to implement flexible displays using current LCD infrastructure, where the thin STS substrate was firstly bonded on a glass substrate with an adhesive material and then carried with the glass substrate. After completing all TFT processes, carrier glass was released by debonding process. Here, there is a limitation of process temperature due to the thermal property of organic adhesive layer between the carrier glass and the thin metal foil, so that we have to fabricate TFT at a lower temperature of less than 200 °C, resulting in poor stability of the switching device. Also, it has not been yet developed a large-area flexible display over A4-size (14-inch) due to the issues of flexible process such as a difficulty of transferring large flexible substrates in Gen. 2 (370 mm × 470 mm) line above, many process defects (peeling, particle. etc), and surface defects of the STS substrate itself. Moreover, it is not easy to apply integrated GIP (Gate driver In the Panel) technology to enhance the flexibility of the display due to the poor TFT performance on STS carried out below 200 °C.
Thus, robust backplane processes are essential in view of developing and manufacturing the flexible display. In this paper, we describe our so-called ‘Single Plate Process’ based on conventional a-Si TFT processes to resolve the issues of flexible process on the STS for making a large-size e-paper display and improve the performance of flexible TFTs on it suitable for applying GIP technology. Then, A3-size (˜19 inch) AMEPD prototype fabricated with current a-Si TFT infrastructure is demonstrated.
 

Section snippets

Fabrication of flexible backplane

A relatively thick STS 430 plate instead of a thin STS 304 foil was used as a substrate to adopt simple processes without using any carrier glasses and an additional adhesive layer. This thick STS enabled us to transfer it stably in a conventional Gen. 2 line as glass substrates because it has almost the same bending radius as the glass substrate. In addition, we can start to run the sample with just initial cleaning process and adopt high temperature process because of no adhesive layer,

Transistor performance

The transfer curves of the flexible TFT fabricated at 250 °C on STS are shown in Fig. 3(a) with varying Vds voltages. Initial property of the a-Si:H TFTs on STS is marked by gray curve, while the blue and the red curves represent electrical properties after heat treatment and bias-temperature stress (BTS), respectively. This flexible TFT shows equivalent results with the standard a-Si:H TFTs at 350 °C on glass as shown in Fig. 3(b). The electric characteristics of this a-Si TFT fabricated at

Conclusion

Preparing the metal foil substrate for manufacturing flexible AMEPD display is a demanding process, which involves coating of thick planarization layer to reduce the surface roughness and prevent chemical damage during the TFT process. Due to the process temperature limitation of using bonding-debonding method for substrate transport, the reliability of a-Si TFT fabricated below 200 °C exhibits rather poor device stability under bias-temperature stress. To increase the process temperature and

Acknowledgement

The authors would like to give thanks to all the members of R&D Team for fully supporting and cooperation in this work.
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